View BLF145_4617514.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BLF145
HF power MOS transistor
Rev. 04 -- 5 January 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
FEATURES * High power gain * Low noise figure * Good thermal stability * Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123A PIN 1 2 3 4 drain source gate source DESCRIPTION
PIN CONFIGURATION
handbook, halfpage
1
4
d g
MBB072
s
2
3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB, class-A SSB, class-AB Note 1. 2-tone efficiency. f (MHz) 28 28 VDS (V) 28 28 ID (A) 1.3 - PL (W) 8 (PEP) 30 (PEP) Gp (dB) >24 typ. 20 D (%)(1) - typ. 40 d3 (dB) <-40 typ. -35
Rev. 04 - 5 January 2007
2 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDSS VGSS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS - - - - -65 - MIN. MAX. 65 20 6 68 150 200 V V A W C C UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE 2.6 0.3 UNIT K/W K/W
handbook, halfpage
10
MRA901
handbook, halfpage
100
MGP035
ID (A)
(1) (2)
Ptot (W) 80
1
(1)
60
(2)
40
10-1 1 10 VDS (V)
102
20 0 40 80 120 Th (C) 160
(1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
Rev. 04 - 5 January 2007
3 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched devices forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 10 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V ID = 1.5 A; VDS = 10 V ID = 1.5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 1.2 - - - - - TYP. - - - - - - 0.4 10 125 75 7 MAX. UNIT - 2 1 4.5 100 - 0.75 - - - - V mA A V mV S A pF pF pF
VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
GROUP
GROUP
Rev. 04 - 5 January 2007
4 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
MGP036
handbook, halfpage
4
handbook, halfpage
12
MGP037
T.C. (mV/K) 2
ID (A) 8
Tj = 25 C
125 C
0
-2 4 -4
-6 10
0 102 103 ID (mA) 104 0 5 10 15 VGS (V) 20
VDS = 10 V. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source voltage; typical values.
handbook, halfpage
0.8
MGP038
handbook, halfpage
240
MGP039
RDS(on) () 0.6
C (pF) 180
Cis 0.4 120 Cos 0.2 60
0 0 40 80 120 Tj (C) ID = 1.5 A; VGS = 10 V. 160
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values.
Rev. 04 - 5 January 2007
5 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, halfpage
20
MRA900
Crs (pF)
10
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
Rev. 04 - 5 January 2007
6 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-A OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 26 ; unless otherwise specified. RF performance in SSB operation in a common source class-A circuit. MODE OF OPERATION SSB, class-A Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. f (MHz) 28 VDS (V) 28 ID (A) 1.3 PL (W) 8 (PEP) GP (dB) >24 typ. 27 d3 (dB)(1) >-40 typ. -43 d5 (dB)(1) <-40 typ. -70 ZL () 18.4 + j5.2
handbook, halfpage
30
MGP040
handbook, halfpage
-20
MGP041
Gp (dB) 28
d3 (dB) -30
-40
26 -50
24 0 10 20 PL (W) PEP 30
-60
0
10
20
PL (W) PEP
30
Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-A operation; VDS = 28 V; ID = 1.3 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.9
Power gain as a function of load power; typical values.
Fig.10 Third order intermodulation distortion as a function of load power; typical values.
Rev. 04 - 5 January 2007
7 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C5 C1 input 50 C3 C2 L1 R1 C4 C7 +VG C11 L6 R2 L2 C6 L4 D.U.T. L3 L5
C9 C10
output 50
C8 +VD C12
MGP042
f = 28 MHz.
Fig.11 Test circuit for class-A operation.
List of components (see Fig.11) COMPONENT C1, C3, C8, C9 C2, C10 C4, C7 C5, C6 C11 C12 L1 L2, L3 L4 L5 L6 R1 R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (r = 4.5), thickness 1.6 mm. . DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor electrolytic capacitor 12 turns enamelled 0.5 mm copper wire stripline; note 2 14 turns enamelled 1 mm copper wire 9 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband HF choke 0.25 W metal film resistor 0.25 W metal film resistor 26 10 VALUE 7 to 100 pF 39 pF 100 nF 27 pF 3 x 100 nF 2.2 F, 63 V 307 nH 30 1039 nH 305 nH length 8 mm; int. dia. 4 mm length 15 x 6 mm length 14 mm; int. dia. 9 mm length 10 mm; int. dia. 6 mm 4312 020 36640 2222 852 47104 2222 030 38228 2222 852 47104 DIMENSIONS CATALOGUE NO. 2222 809 07015
Rev. 04 - 5 January 2007
8 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. MODE OF OPERATION SSB, class-AB Note 1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at PL = 30 W single tone under the following conditions: VDS = 28 V; f = 28 MHz; Th = 25 C; Rth mb-h = 0.3 K/W at rated load power. f (MHz) 28 VDS (V) 28 IDQ (A) 0.25 PL (W) 30 (PEP) Gp (dB) typ. 20 D (%) typ. 40 d3 (dB)(1) typ. -35 d5 (dB)(1) typ. -40 ZL ( ) 8.9 + j1.0
handbook, halfpage
22
MGP043
handbook, halfpage
60
MGP044
Gp (dB) 20
D (%) 40
18
20
16 0 20 40 PL (W) 60
0 0 20 40 PL (W) 60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.12 Power gain as a function of load power, typical values.
Fig.13 Two tone efficiency as a function of load power, typical values.
Rev. 04 - 5 January 2007
9 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, full pagewidth
C4 D.U.T. C1 input 50 C2 L1 R1 C3 C6 +VG R2 L2 C5 L4 L3 L5
C7 C9 C10
output 50
C8 +VD C11 L6
MGP045
C12
f = 28 MHz.
Fig.14 Test circuit for class-AB operation.
List of components (see Fig.14) COMPONENT C1, C2 C3, C6 C4, C5 C7, C10 C8, C9 C11 C12 L1 L2, L3 L4 L5 L6 R1 R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (r = 4.5), thickness 1.6 mm. DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor electrolytic capacitor 13 turns enamelled 0.5 mm copper wire stripline; note 2 10 turns enamelled 1 mm copper wire 9 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband HF choke 0.5 W metal film resistor 0.25 W metal film resistor 34 10 VALUE 5 to 60 pF 100 nF 27 pF 39 pF 7 to 100 pF 3 x 100 nF 2.2 F, 63 V 415 nH 30 390 nH 245 nH length 10 mm; int. dia. 5 mm length 15 x 6 mm length 13 mm; int. dia. 7 mm length 10 mm; int. dia. 5 mm 4312 020 36640 2222 809 07015 2222 852 47104 2222 030 38228 DIMENSIONS CATALOGUE NO. 2222 809 07011 2222 852 47104
Rev. 04 - 5 January 2007
10 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
handbook, halfpage
-20
MGP046
handbook, halfpage
-20
MGP047
d3 (dB) -30
d5 (dB) -30
-40
-40
-50 0 20 40 PL (W) 60
-50 0 20 40 PL (W) 60
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; Rth mb-h = 0.3 K/W; f = 28 MHz. solid line: Th = 25 C. dotted line: Th = 70 C.
Fig.15 Third order intermodulation distortion as a function of load power, typical values.
Fig.16 Fifth order intermodulation distortion as a function of load power, typical values.
MGP048
handbook, halfpage
21
Table 1 Input impedance as a function of frequency Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 . f (MHz) 1.5 3.0 6.0 10 15 20 25 Zi () 32.9 - j2.2 32.4 - j4.3 30.7 - j8.1 27.4 - j11.9 32.9 - j14.6 18.5 - j15.4 15.1 - j15.3 12.5 - j14.6
Gp (dB)
20
19 0 6 12 18 24 30 f (MHz)
30
Class-AB operation; VDS = 28 V; IDQ = 0.25 A; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 34 ; ZL = 8.9 + j1 .
Fig.17 Power gain as a function of frequency, typical values.
Rev. 04 - 5 January 2007
11 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
BLF145 scattering parameters VDS = 28 V; ID = 250 mA; note 1 f (MHz) 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast. s11 |s11| 0.90 0.81 0.76 0.75 0.75 0.75 0.76 0.77 0.77 0.78 0.79 0.81 0.83 0.85 0.87 0.89 0.91 0.93 0.94 0.94 0.95 0.95 0.95 0.94 0.94 0.94 -70.90 -108.90 -140.20 -151.90 -157.90 -161.40 -163.70 -165.30 -166.60 -167.50 -168.40 -170.40 -172.00 -173.60 -175.20 -178.40 178.50 175.50 172.60 169.90 167.20 161.90 156.80 151.90 147.20 142.10 |s21| 62.40 42.47 23.90 16.27 12.18 9.70 8.01 6.78 5.85 5.14 4.56 3.48 2.74 2.23 1.86 1.32 1.00 0.77 0.62 0.50 0.43 0.32 0.26 0.23 0.22 0.23 s21 138.40 117.90 100.40 92.20 86.50 82.00 78.10 74.50 71.30 68.30 65.30 58.20 52.50 47.70 43.00 35.30 29.70 25.50 22.90 20.90 20.30 21.60 25.40 31.50 38.60 48.40 |s12| 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.10 0.12 0.14 0.16 0.15 s12 49.80 30.70 16.40 10.50 8.00 6.60 5.80 5.60 6.20 7.30 8.80 15.50 27.00 41.30 54.50 72.80 80.50 83.90 84.80 85.30 84.20 82.40 79.90 78.20 74.10 75.40 |s22| 0.83 0.72 0.66 0.65 0.64 0.65 0.66 0.67 0.68 0.69 0.71 0.74 0.77 0.80 0.82 0.86 0.89 0.91 0.93 0.94 0.94 0.95 0.96 0.96 0.94 0.94 s22 -67.60 -105.00 -135.80 -147.90 -153.40 -156.40 -158.30 -159.70 -160.50 -161.20 -162.00 -163.70 -164.90 -166.20 -168.00 -171.20 -174.20 -177.10 -179.90 177.60 175.10 170.60 166.40 162.30 158.60 162.10
Rev. 04 - 5 January 2007
12 of 15
NXP Semiconductors
Product specification
HF power MOS transistor
BLF145
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A
D
A F D1 q U1 C B
w2 M C M H b c
4
3
A
p
U2
U3
1 2
H
w1 M A M B M
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.78 9.42 F 2.72 2.31 H 20.71 19.93 p 3.33 3.04 0.131 0.120 Q 4.63 4.11 q 18.42 U1 24.87 24.64 U2 6.48 6.22 U3 9.78 9.39 w1 0.25 w2 0.51 45
0.229 0.007 0.219 0.004
0.383 0.385 0.107 0.815 0.373 0.371 0.091 0.785
0.182 0.980 0.725 0.162 0.970
0.255 0.385 0.010 0.020 0.245 0.370
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
Rev. 04 - 5 January 2007
13 of 15
NXP Semiconductors
BLF145
HF power MOS transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 5 January 2007
14 of 15
NXP Semiconductors
BLF145
HF power MOS transistor
Revision history
Revision history Document ID BLF145_N_4 Modifications: BLF145_3 (9397 750 11581) BLF145_CNV_2 (9397 750 xxxxx) Release date 20070105 Data sheet status Product data sheet Change notice Supersedes BLF145_3
* *
corrections made to note 2 on page 8 corrections made to note 2 on page 10 Product specification Product specification BLF145_CNV_2 -
20031013 19971212
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 January 2007 Document identifier: BLF145_N_4
Rev. 04 - 5 January 2007
15 of 15

▲Up To Search▲

Price & Availability of BLF145

	To Download BLF145 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .